RJK60S7DPP-E0#T2 Renesas Electronics America MOSFET N-CH 600V 30A TO220FP N-Channel 600V 30A (Tc) 34.7W (Tc) Through Hole TO-220FP

ProducentRenesas Electronics America
Part Number

RJK60S7DPP-E0#T2 (RJK60S7DPPE0T2)

Specifications

MOSFET N-CH 600V 30A TO220FP N-Channel 600V 30A (Tc) 34.7W (Tc) Through Hole TO-220FP

Unit Price10,50 EUR
Minimum Order Quantity100
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Renesas Electronics America Series - Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V FET Feature Super Junction Power Dissipation (Max) 34.7W (Tc) Rds On (Max) @ Id, Vgs 125 mOhm @ 15A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack
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