NP50P03YDG-E1-AY Renesas Electronics America MOSFET P-CH 30V 50A 8HSON P-Channel 30V 50A (Tc) 1W (Ta), 102W (Tc) Surface Mount 8-HSON

ProducentRenesas Electronics America
Part Number

NP50P03YDG-E1-AY (NP50P03YDGE1AY)

Specifications

MOSFET P-CH 30V 50A 8HSON P-Channel 30V 50A (Tc) 1W (Ta), 102W (Tc) Surface Mount 8-HSON

Unit Price0,62 EUR
Minimum Order Quantity2.5
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Renesas Electronics America Series - Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta), 102W (Tc) Rds On (Max) @ Id, Vgs 8.4 mOhm @ 25A, 10V Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSON Package / Case 8-SMD, Flat Lead Exposed Pad
Datasheets
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