RSD201N10TL ROHM Semiconductor MOSFET N-CH 100V 20A CPT3 N-Channel 100V 20A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
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| Producent | ROHM Semiconductor | | Part Number | RSD201N10TL (RSD201N10TL) |
| Specifications | MOSFET N-CH 100V 20A CPT3 N-Channel 100V 20A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3 |
| Unit Price | 0,77 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 70 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs 46 mOhm @ 20A, 10V Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package CPT3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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