SCT2080KEC ROHM Semiconductor MOSFET N-CH 1200V 40A TO-247 N-Channel 1200V (1.2kV) 40A (Tc) 262W (Tc) Through Hole TO-247
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| Producent | ROHM Semiconductor | | Part Number | SCT2080KEC (SCT2080KEC) |
| Specifications | MOSFET N-CH 1200V 40A TO-247 N-Channel 1200V (1.2kV) 40A (Tc) 262W (Tc) Through Hole TO-247 |
| Unit Price | 18,22 EUR |
| Minimum Order Quantity | 360 |
| Tariff No. | |
| Lead Time | 140 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Rohm Semiconductor Series - Packaging Tube Part Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Vgs(th) (Max) @ Id 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs 106nC @ 18V Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 800V Vgs (Max) +22V, -6V FET Feature - Power Dissipation (Max) 262W (Tc) Rds On (Max) @ Id, Vgs 117 mOhm @ 10A, 18V Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
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