RQ3E180GNTB ROHM Semiconductor MOSFET N-CH 30V 18A 8-HSMT N-Channel 30V 18A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
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| Producent | ROHM Semiconductor | | Part Number | RQ3E180GNTB (RQ3E180GNTB) |
| Specifications | MOSFET N-CH 30V 18A 8-HSMT N-Channel 30V 18A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3) |
| Unit Price | 0,57 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 70 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 22.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1520pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 2W (Ta) Rds On (Max) @ Id, Vgs 4.3 mOhm @ 18A, 10V Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSMT (3.2x3) Package / Case 8-PowerVDFN |
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