RS1E350BNTB ROHM Semiconductor MOSFET N-CH 30V 35A 8HSOP N-Channel 30V 35A 3W (Ta), 35W (Tc) Surface Mount 8-HSOP
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| Producent | ROHM Semiconductor | | Part Number | RS1E350BNTB (RS1E350BNTB) |
| Specifications | MOSFET N-CH 30V 35A 8HSOP N-Channel 30V 35A 3W (Ta), 35W (Tc) Surface Mount 8-HSOP |
| Unit Price | 1,40 EUR |
| Minimum Order Quantity | 1 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 35A Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 7900pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 3W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs 1.7 mOhm @ 35A, 10V Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSOP Package / Case 8-PowerTDFN |
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