R5009ANX ROHM Semiconductor MOSFET N-CH 500V 9A TO220 N-Channel 500V 9A (Tc) 50W (Tc) Through Hole TO-220FM

ProducentROHM Semiconductor
Part Number

R5009ANX (R5009ANX)

Specifications

MOSFET N-CH 500V 9A TO220 N-Channel 500V 9A (Tc) 50W (Tc) Through Hole TO-220FM

Unit Price1,09 EUR
Minimum Order Quantity500
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Rohm Semiconductor Series - Packaging Bulk Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 50W (Tc) Rds On (Max) @ Id, Vgs 720 mOhm @ 4.5A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FM Package / Case TO-220-3 Full Pack
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