STH185N10F3-6 STMICROELECTRONICS MOSFET N-CH 100V 180A H2PAK-6 N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
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| Producent | STMICROELECTRONICS | | Part Number | STH185N10F3-6 (STH185N10F36) |
| Specifications | MOSFET N-CH 100V 180A H2PAK-6 N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6 |
| Unit Price | 2,80 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 126 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer STMicroelectronics Series Automotive, AEC-Q101, STripFET™ F3 Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 114.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 6665pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 315W (Tc) Rds On (Max) @ Id, Vgs 4.5 mOhm @ 60A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H2PAK-6 Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
| Datasheets | |
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