IRF640FP STMICROELECTRONICS MOSFET N-CH 200V 18A TO-220FP N-Channel 200V 18A (Tc) 40W (Tc) Through Hole TO-220FP

ProducentSTMICROELECTRONICS
Part Number

IRF640FP (IRF640FP)

Specifications

MOSFET N-CH 200V 18A TO-220FP N-Channel 200V 18A (Tc) 40W (Tc) Through Hole TO-220FP

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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer STMicroelectronics Series MESH OVERLAY™ Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1560pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Rds On (Max) @ Id, Vgs 180 mOhm @ 9A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack
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