IRFP250 STMICROELECTRONICS MOSFET N-CH 200V 33A TO-247 N-Channel 200V 33A (Tc) 180W (Tc) Through Hole TO-247-3
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| Producent | STMICROELECTRONICS | | Part Number | IRFP250 (IRFP250) |
| Specifications | MOSFET N-CH 200V 33A TO-247 N-Channel 200V 33A (Tc) 180W (Tc) Through Hole TO-247-3 |
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| Minimum Order Quantity | 30 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer STMicroelectronics Series PowerMESH™ II Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 158nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Rds On (Max) @ Id, Vgs 85 mOhm @ 16A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
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