IRF820 STMICROELECTRONICS MOSFET N-CH 500V 4A TO-220 N-Channel 500V 4A (Tc) 80W (Tc) Through Hole TO-220AB

ProducentSTMICROELECTRONICS
Part Number

IRF820 (IRF820)

Specifications

MOSFET N-CH 500V 4A TO-220 N-Channel 500V 4A (Tc) 80W (Tc) Through Hole TO-220AB

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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer STMicroelectronics Series PowerMESH™ II Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 315pF @ 25V FET Feature - Power Dissipation (Max) 80W (Tc) Rds On (Max) @ Id, Vgs 3 Ohm @ 1.5A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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