STU1HN60K3 STMICROELECTRONICS MOSFET N-CH 600V 1.2A IPAK N-Channel 600V 1.2A (Tc) 27W (Tc) Through Hole I-Pak

ProducentSTMICROELECTRONICS
Part Number

STU1HN60K3 (STU1HN60K3)

Specifications

MOSFET N-CH 600V 1.2A IPAK N-Channel 600V 1.2A (Tc) 27W (Tc) Through Hole I-Pak

Unit Price0,98 EUR
Minimum Order Quantity75
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Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer STMicroelectronics Series SuperMESH3™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 50V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 27W (Tc) Rds On (Max) @ Id, Vgs 8 Ohm @ 600mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-Pak Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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