STB6N80K5 STMICROELECTRONICS MOSFET POWER MOSFET

ProducentSTMICROELECTRONICS
Part Number

STB6N80K5 (STB6N80K5)

Specifications

MOSFET POWER MOSFET

Unit Price2,11 EUR
Minimum Order Quantity1
Tariff No.
Lead Time14 weeks
Weight and Dimension
DescriptionSTMicroelectronics Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 4.5 A Vds - Drain-Source Breakdown Voltage: 800 V Rds On - Drain-Source Resistance: 1.6 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: +/- 30 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 7.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 110 W Mounting Style: SMD/SMT Package/Case: D2PAK-3 Brand: STMicroelectronics Channel Mode: Enhancement Ciss - Input Capacitance: 255 pF Configuration: Single Minimum Operating Temperature: - 55 C Series: STB6N80
Datasheets
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