STU16N65M2 STMICROELECTRONICS MOSFET POWER MOSFET
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| Producent | STMICROELECTRONICS | | Part Number | STU16N65M2 (STU16N65M2) |
| Specifications | MOSFET POWER MOSFET |
| Unit Price | 2,36 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 11 weeks |
| Weight and Dimension | |
| Description | STMicroelectronics Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 11 A Vds - Drain-Source Breakdown Voltage: 650 V Rds On - Drain-Source Resistance: 360 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 25 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 19.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 110 W Mounting Style: Through Hole Package/Case: IPAK-3 Brand: STMicroelectronics Channel Mode: Enhancement Ciss - Input Capacitance: 718 pF Configuration: Single Fall Time: 11.3 ns Minimum Operating Temperature: - 55 C Rise Time: 8.2 ns Series: MDmesh M2 Typical Turn-Off Delay Time: 36 ns |
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