STGB10NB37LZT4 STMICROELECTRONICS STMicroelectronics STGB10NB37LZT4 N-channel IGBT Transistor, 20 A 375 V, 3-Pin D2PAK
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| Producent | STMICROELECTRONICS | | Part Number | STGB10NB37LZT4 (STGB10NB37LZT4) |
| Specifications | STMicroelectronics STGB10NB37LZT4 N-channel IGBT Transistor, 20 A 375 V, 3-Pin D2PAK |
| Unit Price | 1,14 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Channel TypeN ConfigurationSingle Dimensions10.4 x 9.35 x 4.6mm Height4.6mm Length10.4mm Maximum Collector Emitter Voltage375 V Maximum Continuous Collector Current20 A Maximum Gate Emitter Voltage12V Maximum Operating Temperature+175 °C Minimum Operating Temperature-65 °C Mounting TypeSurface Mount Package TypeD2PAK Pin Count3 Width9.35mm Product Details IGBT Discretes, STMicroelectronics IGBT Discretes & Modules, STMicroelectronics The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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