STGD6NC60HD STMICROELECTRONICS STMicroelectronics STGD6NC60HD N-channel IGBT Transistor, 15 A 600 V, 3-Pin D-PAK
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| Producent | STMICROELECTRONICS | | Part Number | STGD6NC60HD (STGD6NC60HD) |
| Specifications | STMicroelectronics STGD6NC60HD N-channel IGBT Transistor, 15 A 600 V, 3-Pin D-PAK |
| Unit Price | 0,50 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Channel TypeN ConfigurationSingle Dimensions6.6 x 6.2 x 2.4mm Height2.4mm Length6.6mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current15 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Package TypeDPAK Pin Count3 Width6.2mm Product Details IGBT Discretes, STMicroelectronics IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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