STH110N10F7-2 STMICROELECTRONICS MOSFET N CH 100V 110A H2PAK N-Channel 100V 110A (Tc) 150W (Tc) Surface Mount H²PAK

ProducentSTMICROELECTRONICS
Part Number

STH110N10F7-2 (STH110N10F72)

Specifications

MOSFET N CH 100V 110A H2PAK N-Channel 100V 110A (Tc) 150W (Tc) Surface Mount H²PAK

Unit Price1,35 EUR
Minimum Order Quantity1
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VII Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5117pF @ 50V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 150W (Tc) Rds On (Max) @ Id, Vgs 6.5 mOhm @ 55A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H²PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab) Variant
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