STP12N65M5 STMICROELECTRONICS MOSFET N-CH 650V 8.5A TO-220 N-Channel 650V 8.5A (Tc) 70W (Tc) Through Hole TO-220AB

ProducentSTMICROELECTRONICS
Part Number

STP12N65M5 (STP12N65M5)

Specifications

MOSFET N-CH 650V 8.5A TO-220 N-Channel 650V 8.5A (Tc) 70W (Tc) Through Hole TO-220AB

Unit Price3,07 EUR
Minimum Order Quantity50
Tariff No.
Lead Time77 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer STMicroelectronics Series MDmesh™ V Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 900pF @ 100V FET Feature - Power Dissipation (Max) 70W (Tc) Rds On (Max) @ Id, Vgs 430 mOhm @ 4.3A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
Datasheets
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