CSD25213W10 TEXAS INSTRUMENTS MOSFET P-CH NexFET Pwr MOSFET
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| Producent | TEXAS INSTRUMENTS | | Part Number | CSD25213W10 (CSD25213W10) |
| Specifications | MOSFET P-CH NexFET Pwr MOSFET |
| Unit Price | 0,84 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 10 weeks |
| Weight and Dimension | |
| Description | Texas Instruments Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: - 1.6 A Vds - Drain-Source Breakdown Voltage: - 20 V Rds On - Drain-Source Resistance: 47 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: - 6 V Vgs th - Gate-Source Threshold Voltage: - 850 mV Qg - Gate Charge: 2.2 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1 W Mounting Style: SMD/SMT Package/Case: DSBGA-4 Packaging: Reel Brand: Texas Instruments Channel Mode: Enhancement Configuration: Single Channel Fall Time: 970 ns Minimum Operating Temperature: - 55 C Rise Time: 520 ns Series: CSD25213W10 Factory Pack Quantity: 3000 Tradename: NexFET Typical Turn-Off Delay Time: 1 us |
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