CSD25211W1015 TEXAS INSTRUMENTS MOSFET PCh NexFET Power MOSFET
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| Producent | TEXAS INSTRUMENTS | | Part Number | CSD25211W1015 (CSD25211W1015) |
| Specifications | MOSFET PCh NexFET Power MOSFET |
| Unit Price | 0,92 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 14 weeks |
| Weight and Dimension | |
| Description | Texas Instruments Product Category: MOSFET RoHS: Details Brand: Texas Instruments Id - Continuous Drain Current: - 3.2 A Vds - Drain-Source Breakdown Voltage: - 20 V Rds On - Drain-Source Resistance: 33 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: - 6 V Vgs th - Gate-Source Threshold Voltage: - 800 mV Qg - Gate Charge: 3.4 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1 W Mounting Style: SMD/SMT Package/Case: DSBGA-6 Packaging: Reel Configuration: Single Channel Fall Time: 14.2 ns Forward Transconductance - Min: 12 S Minimum Operating Temperature: - 55 C Rise Time: 8.8 ns Series: CSD25211W1015 Factory Pack Quantity: 3000 Tradename: NexFET Typical Turn-Off Delay Time: 36.9 ns |
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