2SC3324-BL(TE85L,F Toshiba Bipolar Transistors - BJT NPN 0.1A IC 120V Gen Purp Trans

ProducentToshiba
Part Number

2SC3324-BL(TE85L,F (2SC3324BLTE85LF)

Specifications

Bipolar Transistors - BJT NPN 0.1A IC 120V Gen Purp Trans

Unit Price0,49 EUR
Minimum Order Quantity1
Tariff No.
Lead Time7 weeks
Weight and Dimension
DescriptionToshiba Product Category: Bipolar Transistors - BJT RoHS:  Details Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 120 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 0.3 V Maximum DC Collector Current: 100 mA Gain Bandwidth Product fT: 100 MHz Maximum Operating Temperature: + 125 C Mounting Style: SMD/SMT Package/Case: SOT-346 Brand: Toshiba DC Collector/Base Gain hFE Min: 200 DC Current Gain hFE Max: 700 Maximum Power Dissipation: 150 mW Minimum Operating Temperature: - 55 C Packaging: Reel Factory Pack Quantity: 3000
Datasheets
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