2SA1930(Q,M) Toshiba Bipolar Transistors - BJT PNP 180V 2A Transistor
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| Producent | Toshiba | | Part Number | 2SA1930(Q,M) (2SA1930QM) |
| Specifications | Bipolar Transistors - BJT PNP 180V 2A Transistor |
| Unit Price | 0,95 EUR |
| Minimum Order Quantity | 1 |
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| Description | Toshiba Product Category: Bipolar Transistors - BJT RoHS: Details Brand: Toshiba Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 180 V Collector- Emitter Voltage VCEO Max: - 180 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 200 MHz Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-220-3 FP DC Collector/Base Gain hFE Min: 50 Maximum Power Dissipation: 25W Minimum Operating Temperature: - 55 C Factory Pack Quantity: 50 |
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