2SA1312-BL(TE85L,F Toshiba Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO

ProducentToshiba
Part Number

2SA1312-BL(TE85L,F (2SA1312BLTE85LF)

Specifications

Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO

Unit Price0,46 EUR
Minimum Order Quantity1
Tariff No.
Lead Time3 weeks
Weight and Dimension
DescriptionToshiba Product Category: Bipolar Transistors - BJT RoHS:  Details Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: - 120 V Collector- Emitter Voltage VCEO Max: - 120 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: - 0.3 V Maximum DC Collector Current: - 100 mA Gain Bandwidth Product fT: 100 MHz Mounting Style: SMD/SMT Package/Case: SOT-346 Brand: Toshiba DC Collector/Base Gain hFE Min: 200 DC Current Gain hFE Max: 700 Maximum Power Dissipation: 150 mW Packaging: Reel Factory Pack Quantity: 3000
Datasheets
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