2SA1943N(S1,E,S) Toshiba Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ
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| Producent | Toshiba | | Part Number | 2SA1943N(S1,E,S) (2SA1943NS1ES) |
| Specifications | Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ |
| Unit Price | 2,21 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 4 weeks |
| Weight and Dimension | |
| Description | Toshiba Product Category: Bipolar Transistors - BJT RoHS: Details Configuration: Triple Transistor Polarity: PNP Collector- Base Voltage VCBO: - 230 V Collector- Emitter Voltage VCEO Max: - 230 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: -1.1 V Maximum DC Collector Current: - 15 A Gain Bandwidth Product fT: 30 MHz Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-3P-3 Brand: Toshiba DC Collector/Base Gain hFE Min: 35 DC Current Gain hFE Max: 160 Maximum Power Dissipation: 150 W Minimum Operating Temperature: - 55 C |
| Datasheets | |
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