SSM6N55NU,LF Toshiba MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD
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| Producent | Toshiba | | Part Number | SSM6N55NU,LF (SSM6N55NULF) |
| Specifications | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD |
| Unit Price | 0,75 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 20 weeks |
| Weight and Dimension | |
| Description | Toshiba Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 4 A Vds - Drain-Source Breakdown Voltage: 30 V Rds On - Drain-Source Resistance: 64 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 1.3 V to 2.5 V Qg - Gate Charge: 2.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1 W Mounting Style: SMD/SMT Package/Case: UDFN-6 Packaging: Reel Brand: Toshiba Configuration: Single Minimum Operating Temperature: - 55 C Series: U-MOSVI Factory Pack Quantity: 3000 |
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