SSM6N57NU,LF Toshiba MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS
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| Producent | Toshiba | | Part Number | SSM6N57NU,LF (SSM6N57NULF) |
| Specifications | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS |
| Unit Price | 0,69 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 20 weeks |
| Weight and Dimension | |
| Description | Toshiba Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 4 A Vds - Drain-Source Breakdown Voltage: 30 V Rds On - Drain-Source Resistance: 82 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 12 V Vgs th - Gate-Source Threshold Voltage: 0.4 V to 1 V Qg - Gate Charge: 3.2 nC Pd - Power Dissipation: 2 W Mounting Style: SMD/SMT Package/Case: UDFN-6 Packaging: Reel Brand: Toshiba Configuration: Dual Series: U-MOSVI Factory Pack Quantity: 3000 |
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