TK12E60W,S1VX Toshiba MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC
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| Producent | Toshiba | | Part Number | TK12E60W,S1VX (TK12E60WS1VX) |
| Specifications | MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC |
| Unit Price | 3,08 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 20 weeks |
| Weight and Dimension | |
| Description | Toshiba Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 11.5 A Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 300 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 30 V Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 25 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 110 W Mounting Style: Through Hole Package/Case: TO-220-3 Brand: Toshiba Channel Mode: Enhancement Ciss - Input Capacitance: 890 pF Configuration: Single Fall Time: 5.5 ns Minimum Operating Temperature: - 55 C Rise Time: 23 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 85 ns |
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