TK72E12N1,S1X Toshiba MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044

ProducentToshiba
Part Number

TK72E12N1,S1X (TK72E12N1S1X)

Specifications

MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044

Unit Price2,33 EUR
Minimum Order Quantity1
Tariff No.
Lead Time20 weeks
Weight and Dimension
DescriptionToshiba Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 179 A Vds - Drain-Source Breakdown Voltage: 120 V Rds On - Drain-Source Resistance: 3.6 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 130 nC Pd - Power Dissipation: 255 W Mounting Style: Through Hole Package/Case: TO-220-3 Brand: Toshiba Channel Mode: Enhancement Configuration: Single Fall Time: 37 ns Rise Time: 33 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 120 ns
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