TK6A60D(STA4,Q,M) Toshiba MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm
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| Producent | Toshiba | | Part Number | TK6A60D(STA4,Q,M) (TK6A60DSTA4QM) |
| Specifications | MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm |
| Unit Price | 1,66 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 20 weeks |
| Weight and Dimension | |
| Description | Toshiba Product Category: MOSFET RoHS: Details Brand: Toshiba Id - Continuous Drain Current: 6 A Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 1.25 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 30 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 16 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 40 W Mounting Style: Through Hole Package/Case: TO-220-3 Channel Mode: Enhancement Configuration: Single Fall Time: 12 ns Minimum Operating Temperature: - 55 C Rise Time: 20 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 60 ns |
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