TC58NVG2S3ETAI0 Toshiba TC58NVG2S3ETAI0, Parallel NAND Flash Memory, 512M x 8 4 GByte, 25ns, 2.7 → 3.6 V, 48-Pin, TSOP

ProducentToshiba
Part Number

TC58NVG2S3ETAI0 (TC58NVG2S3ETAI0)

Specifications

TC58NVG2S3ETAI0, Parallel NAND Flash Memory, 512M x 8 4 GByte, 25ns, 2.7 → 3.6 V, 48-Pin, TSOP

Unit Price11,40 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionBlock OrganisationSymmetrical Cell TypeNAND Dimensions18.4 x 12.4 x 1mm Height1mm Interface TypeParallel Length18.4mm Maximum Operating Supply Voltage4.6 V Maximum Operating Temperature+85 °C Maximum Random Access Time25ns Memory Size4 GByte Minimum Operating Supply Voltage-0.6 V Minimum Operating Temperature-40 °C Mounting TypeSurface Mount Number of Bits per Word8bit Number of Words512M Organisation512M x 8 Package TypeTSOP Pin Count48 Width12.4mm Product Details Flash Memory, Toshiba Flash EPROM FLASH memory is non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
Datasheets
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