TPC8018-H(TE12L,Q) Toshiba Toshiba TPC8018-H(TE12L,Q) N-channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOP
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| Producent | Toshiba | | Part Number | TPC8018-H(TE12L,Q) (TPC8018HTE12LQ) |
| Specifications | Toshiba TPC8018-H(TE12L,Q) N-channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOP |
| Unit Price | 0,85 EUR |
| Minimum Order Quantity | 1 |
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| Description | CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationQuad Drain, Single, Triple Source Height1.5mm Maximum Continuous Drain Current18 A Maximum Drain Source Resistance0.005 Ω Maximum Drain Source Voltage30 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+150 °C Maximum Power Dissipation1.9 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeSOP Pin Count8 Typical Gate Charge @ Vgs21 nC V @ 5, 38 nC V @ 10 Typical Input Capacitance @ Vds2265 pF V @ 10 Product Details N-Channel MOSFETs 18A to 19A MOSFETs - N-Channel The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type. |
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