TRS8E65C,S1Q Toshiba Semiconductor and Storage DIODE SCHOTTKY 650V 8A TO220-2L Diode Silicon Carbide Schottky 650V 8A (DC) Through Hole TO-220-2L
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| Producent | Toshiba Semiconductor and Storage | | Part Number | TRS8E65C,S1Q (TRS8E65CS1Q) |
| Specifications | DIODE SCHOTTKY 650V 8A TO220-2L Diode Silicon Carbide Schottky 650V 8A (DC) Through Hole TO-220-2L |
| Unit Price | 9,16 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Diodes - Rectifiers - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tube Part Status Active Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 8A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 8A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 90µA @ 650V Capacitance @ Vr, F 44pF @ 650V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2L Operating Temperature - Junction 175°C (Max) |
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