TK33S10N1Z,LQ Toshiba Semiconductor and Storage MOSFET N-CH 100V 33A DPAK N-Channel 100V 33A (Ta) 125W (Tc) Surface Mount DPAK+
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| Producent | Toshiba Semiconductor and Storage | | Part Number | TK33S10N1Z,LQ (TK33S10N1ZLQ) |
| Specifications | MOSFET N-CH 100V 33A DPAK N-Channel 100V 33A (Ta) 125W (Tc) Surface Mount DPAK+ |
| Unit Price | 1,69 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 112 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 33A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 125W (Tc) Rds On (Max) @ Id, Vgs 9.7 mOhm @ 16.5A, 10V Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK+ Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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