SSM5N16FUTE85LF Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.1A USV N-Channel 20V 100mA (Ta) 200mW (Ta) Surface Mount USV

ProducentToshiba Semiconductor and Storage
Part Number

SSM5N16FUTE85LF (SSM5N16FUTE85LF)

Specifications

MOSFET N-CH 20V 0.1A USV N-Channel 20V 100mA (Ta) 200mW (Ta) Surface Mount USV

Unit Price690,11 EUR
Minimum Order Quantity3
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series π-MOSVI Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V Vgs (Max) ±10V FET Feature - Power Dissipation (Max) 200mW (Ta) Rds On (Max) @ Id, Vgs 3 Ohm @ 10mA, 4V Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package USV Package / Case 5-TSSOP, SC-70-5, SOT-353
Datasheets
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