2SK2009TE85LF Toshiba Semiconductor and Storage MOSFET N-CH 30V 0.2A SMINI N-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59-3
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| Producent | Toshiba Semiconductor and Storage | | Part Number | 2SK2009TE85LF (2SK2009TE85LF) |
| Specifications | MOSFET N-CH 30V 0.2A SMINI N-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59-3 |
| Unit Price | 0,16 EUR |
| Minimum Order Quantity | 3 |
| Tariff No. | |
| Lead Time | 77 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V Vgs(th) (Max) @ Id 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 70pF @ 3V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 200mW (Ta) Rds On (Max) @ Id, Vgs 2 Ohm @ 50MA, 2.5V Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-59-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
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