TPN11003NL,LQ Toshiba Semiconductor and Storage MOSFET N CH 30V 11A 8TSON-ADV N-Channel 30V 11A (Tc) 700mW (Ta), 19W (Tc) Surface Mount 8-TSON Advance

ProducentToshiba Semiconductor and Storage
Part Number

TPN11003NL,LQ (TPN11003NLLQ)

Specifications

MOSFET N CH 30V 11A 8TSON-ADV N-Channel 30V 11A (Tc) 700mW (Ta), 19W (Tc) Surface Mount 8-TSON Advance

Unit Price0,20 EUR
Minimum Order Quantity3
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Vgs(th) (Max) @ Id 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V FET Feature - Power Dissipation (Max) 700mW (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs 11 mOhm @ 5.5A, 10V Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSON Advance Package / Case 8-PowerVDFN
Datasheets
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