TK100L60W,VQ Toshiba Semiconductor and Storage MOSFET N CH 600V 100A TO3P(L) N-Channel 600V 100A (Ta) 797W (Tc) Through Hole TO-3P(L)
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| Producent | Toshiba Semiconductor and Storage | | Part Number | TK100L60W,VQ (TK100L60WVQ) |
| Specifications | MOSFET N CH 600V 100A TO3P(L) N-Channel 600V 100A (Ta) 797W (Tc) Through Hole TO-3P(L) |
| Unit Price | 28,21 EUR |
| Minimum Order Quantity | 100 |
| Tariff No. | |
| Lead Time | 112 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.7V @ 5mA Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 30V Vgs (Max) ±30V FET Feature Super Junction Power Dissipation (Max) 797W (Tc) Rds On (Max) @ Id, Vgs 18 mOhm @ 50A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P(L) Package / Case TO-3PL |
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