TK12A60U(Q,M) Toshiba Semiconductor and Storage MOSFET N-CH 600V 12A TO220SIS N-Channel 600V 12A (Ta) 35W (Tc) Through Hole TO-220SIS
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| Producent | Toshiba Semiconductor and Storage | | Part Number | TK12A60U(Q,M) (TK12A60UQM) |
| Specifications | MOSFET N-CH 600V 12A TO220SIS N-Channel 600V 12A (Ta) 35W (Tc) Through Hole TO-220SIS |
| Unit Price | 3,34 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 720pF @ 10V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 35W (Tc) Rds On (Max) @ Id, Vgs 400 mOhm @ 6A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack |
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