TK25A60X,S5X Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-3PN N-Channel 600V 25A (Ta) 45W (Tc) Through Hole TO-220SIS

ProducentToshiba Semiconductor and Storage
Part Number

TK25A60X,S5X (TK25A60XS5X)

Specifications

MOSFET N-CH 600V 25A TO-3PN N-Channel 600V 25A (Ta) 45W (Tc) Through Hole TO-220SIS

Unit Price4,07 EUR
Minimum Order Quantity50
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 300V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 45W (Tc) Rds On (Max) @ Id, Vgs 125 mOhm @ 7.5A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack, Isolated Tab
Datasheets
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