TK31V60W5,LVQ Toshiba Semiconductor and Storage MOSFET N -CH 600V 30.8A DFN N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
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| Producent | Toshiba Semiconductor and Storage | | Part Number | TK31V60W5,LVQ (TK31V60W5LVQ) |
| Specifications | MOSFET N -CH 600V 30.8A DFN N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8) |
| Unit Price | 4,42 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 240W (Tc) Rds On (Max) @ Id, Vgs 109 mOhm @ 15.4A, 10V Operating Temperature 150°C (TA) Mounting Type Surface Mount Supplier Device Package 4-DFN-EP (8x8) Package / Case 4-VSFN Exposed Pad |
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