TK31N60W,S1VF Toshiba Semiconductor and Storage MOSFET N CH 600V 30.8A TO247 N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-247
| |
|
| Producent | Toshiba Semiconductor and Storage | | Part Number | TK31N60W,S1VF (TK31N60WS1VF) |
| Specifications | MOSFET N CH 600V 30.8A TO247 N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-247 |
| Unit Price | 7,12 EUR |
| Minimum Order Quantity | 30 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V Vgs (Max) ±30V FET Feature Super Junction Power Dissipation (Max) 230W (Tc) Rds On (Max) @ Id, Vgs 88 mOhm @ 15.4A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
