TK62N60X,S1F Toshiba Semiconductor and Storage MOSFET N-CH 600V 61.8A TO-247 N-Channel 600V 61.8A (Ta) 400W (Tc) Through Hole TO-247
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| Producent | Toshiba Semiconductor and Storage | | Part Number | TK62N60X,S1F (TK62N60XS1F) |
| Specifications | MOSFET N-CH 600V 61.8A TO-247 N-Channel 600V 61.8A (Ta) 400W (Tc) Through Hole TO-247 |
| Unit Price | 9,20 EUR |
| Minimum Order Quantity | 30 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV-H Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 61.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 3.1mA Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 300V Vgs (Max) ±30V FET Feature Super Junction Power Dissipation (Max) 400W (Tc) Rds On (Max) @ Id, Vgs 40 mOhm @ 21A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
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