TPN11006NL,LQ Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8TSON N-Channel 60V 17A (Tc) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance
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| Producent | Toshiba Semiconductor and Storage | | Part Number | TPN11006NL,LQ (TPN11006NLLQ) |
| Specifications | MOSFET N-CH 60V 17A 8TSON N-Channel 60V 17A (Tc) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance |
| Unit Price | 0,29 EUR |
| Minimum Order Quantity | 3 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 30V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 700mW (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs 11.4 mOhm @ 8.5A, 10V Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSON Advance Package / Case 8-PowerVDFN |
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