TPN7R506NH,L1Q Toshiba Semiconductor and Storage MOSFET N-CH 60V 26A 8TSON N-Channel 60V 26A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance
| |
|
| Producent | Toshiba Semiconductor and Storage | | Part Number | TPN7R506NH,L1Q (TPN7R506NHL1Q) |
| Specifications | MOSFET N-CH 60V 26A 8TSON N-Channel 60V 26A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance |
| Unit Price | 0,29 EUR |
| Minimum Order Quantity | 5 |
| Tariff No. | |
| Lead Time | 112 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 26A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V Vgs(th) (Max) @ Id 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 30V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 700mW (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs 7.5 mOhm @ 13A, 10V Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSON Advance Package / Case 8-PowerVDFN |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
