TK90S06N1L,LQ Toshiba Semiconductor and Storage MOSFET N-CH 60V 90A DPAK N-Channel 60V 90A (Ta) 157W (Tc) Surface Mount TO-252-3

ProducentToshiba Semiconductor and Storage
Part Number

TK90S06N1L,LQ (TK90S06N1LLQ)

Specifications

MOSFET N-CH 60V 90A DPAK N-Channel 60V 90A (Ta) 157W (Tc) Surface Mount TO-252-3

Unit Price0,86 EUR
Minimum Order Quantity2
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 90A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 157W (Tc) Rds On (Max) @ Id, Vgs 3.3 mOhm @ 45A, 10V Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
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