TK14E65W5,S1X Toshiba Semiconductor and Storage MOSFET N-CH 650V 13.7A TO-220AB N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-220
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| Producent | Toshiba Semiconductor and Storage | | Part Number | TK14E65W5,S1X (TK14E65W5S1X) |
| Specifications | MOSFET N-CH 650V 13.7A TO-220AB N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-220 |
| Unit Price | 3,06 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 690µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 300V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 130W (Tc) Rds On (Max) @ Id, Vgs 300 mOhm @ 6.9A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
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