TK6A65W,S5X Toshiba Semiconductor and Storage MOSFET N-CH 650V 5.8A TO-220SIS N-Channel 650V 5.8A (Ta) 30W (Tc) Through Hole TO-220SIS
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| Producent | Toshiba Semiconductor and Storage | | Part Number | TK6A65W,S5X (TK6A65WS5X) |
| Specifications | MOSFET N-CH 650V 5.8A TO-220SIS N-Channel 650V 5.8A (Ta) 30W (Tc) Through Hole TO-220SIS |
| Unit Price | 1,71 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 180µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 390pF @ 300V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 30W (Tc) Rds On (Max) @ Id, Vgs 1 Ohm @ 2.9A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack, Isolated Tab |
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