TK6A80E,S4X Toshiba Semiconductor and Storage MOSFET N-CH 800V TO220SIS N-Channel 800V 6A (Ta) 45W (Tc) Through Hole TO-220SIS
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Producent | Toshiba Semiconductor and Storage | Part Number | TK6A80E,S4X (TK6A80ES4X) |
Specifications | MOSFET N-CH 800V TO220SIS N-Channel 800V 6A (Ta) 45W (Tc) Through Hole TO-220SIS |
Unit Price | 1,84 EUR |
Minimum Order Quantity | 50 |
Tariff No. | |
Lead Time | 84 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 600µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 45W (Tc) Rds On (Max) @ Id, Vgs 1.7 Ohm @ 3A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack, Isolated Tab |
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