TPN13008NH,L1Q Toshiba Semiconductor and Storage MOSFET N-CH 80V 40A 8TSON N-Channel 80V 18A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance

ProducentToshiba Semiconductor and Storage
Part Number

TPN13008NH,L1Q (TPN13008NHL1Q)

Specifications

MOSFET N-CH 80V 40A 8TSON N-Channel 80V 18A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance

Unit Price0,30 EUR
Minimum Order Quantity5
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 40V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 700mW (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs 13.3 mOhm @ 9A, 10V Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSON Advance Package / Case 8-PowerVDFN
Datasheets
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