TK7J90E,S1E Toshiba Semiconductor and Storage MOSFET N-CH 900V TO-3PN N-Channel 900V 7A (Ta) 200W (Tc) Through Hole TO-3P(N)
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| Producent | Toshiba Semiconductor and Storage | | Part Number | TK7J90E,S1E (TK7J90ES1E) |
| Specifications | MOSFET N-CH 900V TO-3PN N-Channel 900V 7A (Ta) 200W (Tc) Through Hole TO-3P(N) |
| Unit Price | 2,82 EUR |
| Minimum Order Quantity | 25 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 700µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 200W (Tc) Rds On (Max) @ Id, Vgs 2 Ohm @ 3.5A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P(N) Package / Case TO-3P-3, SC-65-3 |
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